Part number:
GS-065-011-2-L
Manufacturer:
GaN Systems
File Size:
0.97 MB
Description:
650v e-mode gan transistor.
The GS-065-011-2-L is an enhancement mode GaNon-Silicon power transistor.
The properties of GaN allow for high current, high voltage breakdown and high switching frequency.
GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu
GS-065-011-2-L Features
* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled 8x8 mm PDFN package
* RDS(on) = 150 mΩ
* IDS,max = 11 A / IDSmax,Pulse = 19A
* Ultra-low FOM
* Simple gate drive requirements (0 V to 6 V)
Datasheet Details
GS-065-011-2-L
GaN Systems
0.97 MB
650v e-mode gan transistor.
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