GS-065-011-2-L Datasheet - GaN Systems

GS-065-011-2-L 650V E-mode GaN transistor

The GS-065-011-2-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu.

GS-065-011-2-L Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled 8x8 mm PDFN package

* RDS(on) = 150 mΩ

* IDS,max = 11 A / IDSmax,Pulse = 19A

* Ultra-low FOM

* Simple gate drive requirements (0 V to 6 V)

GS-065-011-2-L-GaNSystems.pdf

GS-065-011-2-L Datasheet Preview — Preview of GS-065-011-2-L PDF

Datasheet Details

Part number:

GS-065-011-2-L

Manufacturer:

GaN Systems

File Size:

0.97 MB

Description:

650v e-mode gan transistor.

GS-065-011-2-L Distributor

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GS-065-011-2-L GS-065-011-2-L 650V E-mode GaN transistor GaN Systems