Datasheet4U Logo Datasheet4U.com

GS-065-011-2-L - 650V E-mode GaN transistor

Datasheet Summary

Description

The GS-065-011-2-L is an enhancement mode GaNon-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • 650 V enhancement mode power transistor.
  • 850 V transient drain-to-source voltage.
  • Bottom-cooled 8x8 mm PDFN package.
  • RDS(on) = 150 mΩ.
  • IDS,max = 11 A / IDSmax,Pulse = 19A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • High switching frequency (> 1 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Ze.

📥 Download Datasheet

Datasheet preview – GS-065-011-2-L

Datasheet Details

Part number GS-065-011-2-L
Manufacturer GaN Systems
File Size 0.97 MB
Description 650V E-mode GaN transistor
Datasheet download datasheet GS-065-011-2-L Datasheet
Additional preview pages of the GS-065-011-2-L datasheet.

📁 Similar Datasheet

  • GS-333 - Precision Non Military Metal Galze Resistors (International Resistive)
  • GS-9018 - specifications power (ETC)
  • GS-AQ911 - Space air quality transmitter (Sontay)
  • GS-BT2416C1 - Bluetooth Class 1 Module (ST Microelectronics)
  • GS-BT2416C2 - Bluetooth Class 1 Module (ST Microelectronics)
  • GS-C200 - INTELLIGENT STEPPER MOTOR CONTROLLERS (STMicroelectronics)
  • GS-C200S - INTELLIGENT STEPPER MOTOR CONTROLLERS (STMicroelectronics)
  • GS-D200 - 2/2.5A BIPOLAR STEPPER MOTOR DRIVE MODULES (STMicroelectronics)
  • GS-D200S - 2/2.5A BIPOLAR STEPPER MOTOR DRIVE MODULES (STMicroelectronics)
  • GS-GB1286420YFYJ - LCD Module (Genda)
Other Datasheets by GaN Systems

Full PDF Text Transcription

Click to expand full text
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • IDS,max = 11 A / IDSmax,Pulse = 19A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant GS-065-011-2-L 650 V E-mode GaN transistor Datasheet Top View Bottom View Applications • Consumer and Industrial Power Supplies • Power Adapters • LED Lighting Drivers • Fast Battery Charging • Power Factor Correction • Appliance and Industrial Motor Drives • Wireless Power Transfer D
Published: |