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GS-065-011-6-L - 700V E-mode GaN transistor

GaN Systems

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Datasheet Details

Part number: GS-065-011-6-L
Manufacturer: GaN Systems
File Size: 847.94 KB
Datasheet: GS-065-011-6-L-GaNSystems.pdf
Description: 700V E-mode GaN transistor

GS-065-011-6-L Product details

Description

The GS-065-011-6-L is an enhancement mode GaNon-Silicon power transistor.

Features

700 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, small 5x6 mm PDFN package.
RDS(on) = 125 mΩ.
IDSmax,DC = 12.2 A / IDSmax,Pulse = 20 A.
Ultra-low FOM.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.

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Published: Jun 17, 2024 |