GS-9018
ETC
225.62 KB
Specifications power.
Спецификации серво GS-9018
Система управления Рабочее напряжение Рабочая температура Напряжение питания: Усилие на валу Скорость Ток покоя Рабочий ток.
📁 Related Datasheet
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Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
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Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.
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Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.
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GS-065-011-1-L 650 V E-mode GaN transistor
Datasheet
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GS-065-011-2-L - 650V E-mode GaN transistor
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GS-065-011-6-L - 700V E-mode GaN transistor
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• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 12.
GS-065-011-6-LR - 700V E-mode GaN transistor
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