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GS-065-008-1-L - 650V E-mode GaN transistor

GaN Systems

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Datasheet Details

Part number: GS-065-008-1-L
Manufacturer: GaN Systems
File Size: 1.00 MB
Datasheet: GS-065-008-1-L-GaNSystems.pdf
Description: 650V E-mode GaN transistor

GS-065-008-1-L Product details

Description

The GS-065-008-1-L is an enhancement mode GaNon-Silicon power transistor.

Features

650 V enhancement mode power transistor.
850 V transient drain-to-source voltage.
Bottom-cooled, small 5x6 mm PDFN package.
RDS(on) = 225 mΩ.
IDSmax,DC= 8 A / IDSmax,Pulse = 13.5 A.
Ultra-low FOM.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 V / +10 V).
High switching frequency (> 1 MHz).
Fast and controllable fall and rise times.
Reverse conduction capability.

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650V E-mode GaN transistor GaN Systems

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