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GS-065-004-1-L

650V E-mode GaN transistor

GS-065-004-1-L Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, small 5x6 mm PDFN package

* RDS(on) = 450 mΩ

* IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A

* Ultra-low FOM

* Simple gate drive requirements (0 V to

GS-065-004-1-L General Description

The GS-065-004-1-L is an enhancement mode GaN-onSilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu.

GS-065-004-1-L Datasheet (1.08 MB)

Preview of GS-065-004-1-L PDF

Datasheet Details

Part number:

GS-065-004-1-L

Manufacturer:

GaN Systems

File Size:

1.08 MB

Description:

650v e-mode gan transistor.
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.

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GS-065-004-1-L 650V E-mode GaN transistor GaN Systems

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