GS-065-004-1-L Datasheet - GaN Systems

GS-065-004-1-L 650V E-mode GaN transistor

The GS-065-004-1-L is an enhancement mode GaN-onSilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu.

Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this do.

GS-065-004-1-L Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, small 5x6 mm PDFN package

* RDS(on) = 450 mΩ

* IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A

* Ultra-low FOM

* Simple gate drive requirements (0 V to

GS-065-004-1-L Datasheet (1.08 MB)

GS-065-004-1-L Datasheet Preview — Preview of GS-065-004-1-L PDF

Datasheet Details

Part number:

GS-065-004-1-L

Manufacturer:

GaN Systems

File Size:

1.08 MB

Description:

650v e-mode gan transistor.

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GS-065-004-1-L 650V E-mode GaN transistor GaN Systems

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