650V Datasheet | Specifications & PDF Download

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 28 February 2025 Product data sheet 1. Genera

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PNU65010ER-Q 650 V, 1 A ultrafast recovery rectifier 11 March 2025 Product data sheet 1. General description High power density, ultrafast switching

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●General Description The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device of

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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QM09N65F 1 2011-03-08 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM09N65F is the highest performance N-ch MOSFETs with speci

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http://www.fujielectric.com/products/semiconductor/ 1MBI650VXA-170EL-54 IGBT MODULE (V series) 1700V / 650A / 1 in one package IGBT Modules Feature

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RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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RX65T080PS3A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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E6D16065H E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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Public IMBG65R033M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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IKWH75N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE

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GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features • 650 V enhancement mode power switch

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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UNISONIC TECHNOLOGIES CO., LTD UTG25N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N

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