650V Datasheet | Specifications & PDF Download

DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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OSPF10N65C http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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OB2136 650V 3-Phase Half-Bridge Gate-Driver IC General Description OB2136 is a monolithic three-phase half-bridge gate driver IC designed for high vo

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HCS65R320S June 2019 HCS65R320S 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan F

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features • 650 V enhancement mode power switch

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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TPA65R170M, TPP65R170M, TPV65R170M, TPW65R170M   Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l   Very low FOM RDS

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=10 V  Super Junction Technology  Ultra-fast and robust body diode  100% Avalanche tes

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the o

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw

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