650V Datasheet | Specifications & PDF Download

OB2136 650V 3-Phase Half-Bridge Gate-Driver IC General Description OB2136 is a monolithic three-phase half-bridge gate driver IC designed for high vo

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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I06N60T-VB I06N60T-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC

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SJMOS N-MOSFET 650V, 0.27Ω, A Features • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM • Qualified fo

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OSPF10N65C http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche

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SCX65R380C 650V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting dev

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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650V Silicon Carbide Schottky Diode GENERAL DESCRIPTION ◆650V Schottky rectifier ◆Zero reverse recovery current/voltage ◆High frequency operation ◆Swi

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced u

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HMG50N65FT Part No.：HMG50N65FT Package：TO-247-3L Features:  Low Switching Power Loss  Low Switching Surge and Noise  Advanced Field Stop Technolog

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SJMOS N-MOSFET 650V, 0.27Ω, A Features • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM • Qualified fo

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●General Description The SJ MOSFET HMS20N65D8 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.This device

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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650V N-CHANNEL MOSFET GENERAL DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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SMF20N65-Z 650V N-Channel MOSFET ●Features： ■ 20.0A, 650V, RDS(on)(Typ) =380mΩ@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Sw

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DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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