650V Datasheet | Specifications & PDF Download

Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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Public IGLT65R055B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bi‑directional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional S

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R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoH

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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K2022-VB K2022-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qg

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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（） Product Specifications (Tentative) ： Customer’s name ： ： Customer’s parts name ： Customer’s parts number ソニー ： US18650VTC5A SONY par

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HF4N65 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the o

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TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 7 March 2025 Product data sheet 1. General des

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