650V Datasheet | Specifications & PDF Download

Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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QM09N65F 1 2011-03-08 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM09N65F is the highest performance N-ch MOSFETs with speci

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Public IMBG65R033M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw

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IKWH75N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE

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Public IGI65D1414A3MS Final datasheet CoolGaNTM Transistor Dual 650V G5 140 m / 650 V GaN half-bridge Features • Two 140 m GaN switches in half-bri

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STW20NM60-VB www.VBsemi.com STW20NM60-VB Datasheet N-Channel 650 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at

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() CRJQ125N65G2BF SJMOS N-MOSFET 650V, 103mΩ, 27A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficienc

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SWP740-VB www.VBsemi.com SWP740-VB Datasheet /$IBOOFM
657
%4 4VQFS
+VODUJPO Power MOSFET
PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Si

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Public IGLT65R035D2 Final datasheet CoolGaN™ G5 CoolGaN™ Transistor 650 V G5 Infineon’s CoolGaN™ is a highly efficient gallium nitride (GaN) transist

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UNISONIC TECHNOLOGIES CO., LTD UTG20N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG20N65-S is a

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6EDL04 family 6EDL04x065xT family 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode

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6EDL04 family 6EDL04x065xT family 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode

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JCS8N65FB-VB JCS8N65FB-VB Datasheet /$IBOOFM
7
%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.

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