DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

Features  Max Junction Temperature 175°C  High breakdown voltage up to 650V for improved reliability  Short Circuit Rated  Very Low Saturation Vol

OSPF10N65C http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche

MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

S3D03065A S3D03065F S3D03065E S3D03065I Technical Data Data Sheet N2362, REV.C S3D03065A/S3D03065F/S3D03065E/S3D03065I 3A 650V SIC POWER SCHOTTKY RECT

7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan F

HMG50N65FT Part No.：HMG50N65FT Package：TO-247-3L Features:  Low Switching Power Loss  Low Switching Surge and Noise  Advanced Field Stop Technolog

UNISONIC TECHNOLOGIES CO., LTD 7N65L Preliminary 7.4A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65L is a high voltage power MOSFET and

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2E Rev. 1.0

() CRJQ80N65F SJMOS N-MOSFET 650V, 77mΩ, 43A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency • B

S3D03065T Technical Data Data Sheet N2748, REV.- S3D03065T 3A 650V SIC POWER SCHOTTKY RECTIFIERS Features SOD-123FL  175°C TJ operation  Ultra-lo

SVF12N65CFJ_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 0B SVF12N65CFJ is an N-channel enhancement mode power MOS field effect transistor

SGM150TL6A9TFD Datasheet 150A, 650V IGBT MODULE 1.DESCRIPTION SGM150TL6A9TFD Module offers the optimum performance for 3-Level-Applications, Solar A

SSF65R130S2/SSP65R130S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF65R130S2/SSP65R130S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ

TP65H030G4PQS 650V SuperGaN® GaN FET in TOLL (source tab) Datasheet Description The TP65H030G4PQS 650V, 30mΩ Gallium Nitride (GaN) FET is a normally