650V Datasheet | Specifications & PDF Download

Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhan

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SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor wh

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N

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STPSC6H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC6H065DLF Product summary Symbol Value IF(AV) 6A VRR

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UNISONIC TECHNOLOGIES CO., LTD UTG40N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N65-S is a

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UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is

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Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ •

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UNISONIC TECHNOLOGIES CO., LTD 2N65-TC 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-TC is a N-channel mode power MOSFET using UTC’s adva

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Silan Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet 50A, 650V FIELD STOP IGBT C 2 DESCRIPTION 1 SGT50T65FD1PN/P7/PS/PT using Field Stop IV IGBT

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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FQPF7N65C — N-Channel QFET® MOSFET FQPF7N65C N-Channel QFET® MOSFET 650 V, 7 A, 1.4 Ω August 2013 Description Features This N-Channel enhancement

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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SVD10N65T/F(G)_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD10N65T/F(G) is an N-channel enhancement mode power MOS field effect transis

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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TPA65R360M, TPD65R360M, TPP65R360M, TPU65R360M   Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES l   Very low FOM RDS

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DATA SHEET www.onsemi.com ASPM 27 Series 3−Phase 650 V, 50 A Automotive Smart Power Module NFVA35065L32 General Description NFVA35065L32 is an advan

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