IGLT65R110B2 - 650V Bidirectional switch

Datasheet Summary

Description

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Features

650 V CoolGaN™ technology with 850 VSS surge immunity.
Superior rugged Gate Injection Transistor (GIT) structure.
Dual‑gate for independent bi‑directional functionality.
Superior performance of RSS(on) over operating frequency.
Reliable Thermal Cycling on‑Board (TCoB) performance.
Optimized for soft switching operation.
2 kV HBM ESD standard Benefits.
Effective replacement of back‑to‑back uni‑directional products.

Infineon

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Datasheet Details

Part number	IGLT65R110B2
Manufacturer	Infineon
File Size	1.27 MB
Description	650V Bidirectional switch
Datasheet	IGLT65R110B2 Datasheet
Additional preview pages of the IGLT65R110B2 datasheet.

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Switch (BDS) is an innovative solution in gallium nitride (GaN) transistor technology. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications. The CoolGaN™ BDS monolithically integrates a substrate voltage control circuit, thanks to Infineon's proprietary technology, this reduces design complexity. IGLT65R110B2 is offered in Infineon’s TOLT, top‑side cooling package specially designed to enable the highest power densities for power‑demanding industrial applications.

Published: May 21, 2025 |