IGLT65R110B2 Description
3 Thermal characteristics.
IGLT65R110B2 Key Features
- 650 V CoolGaN™ technology with 850 VSS surge immunity
- Superior rugged Gate Injection Transistor (GIT) structure
- Dual‑gate for independent bi‑directional functionality
- Superior performance of RSS(on) over operating frequency
- Reliable Thermal Cycling on‑Board (TCoB) performance
- Optimized for soft switching operation
- 2 kV HBM ESD standard
- Effective replacement of back‑to‑back uni‑directional products
- Improves system efficiency and power density
- Enables higher switching frequency
IGLT65R110B2 Applications
- 650 V CoolGaN™ technology with 850 VSS surge immunity