GS-065-018-2-L 650V E-mode GaN transistor

GaN Systems

Description

GS-065-018-2-L 650 V E-mode GaN transistor Datasheet .
The GS-065-018-2-L is a 650V enhancement mode GaNon-Silicon power transistor.

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Datasheet Specifications

Part number: GS-065-018-2-L
Manufacturer: GaN Systems
File Size: 865.59 KB
Datasheet: GS-065-018-2-L-GaNSystems.pdf
Description: 650V E-mode GaN transistor

Features

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 78 mΩ
* IDSmax,DC = 18 A / IDsmax,Pulse = 35 A
* Simple gate drive requirements (0 V to 6 V)
* Transient tolera

Applications

* Consumer and Industrial Power Supplies
* Power Adapters
* LED Lighting Drivers
* Fast Battery Charging
* Power Factor Correction
* Appliance and Industrial Motor Drives

GS-065-018-2-L Distributors

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GS-065-018-2-L 650V E-mode GaN transistor GaN Systems

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