GS-065-014-6-L Datasheet, Transistor, GaN Systems

GS-065-014-6-L Features

  • Transistor
  • 700 V enhancement mode power transistor
  • 850 V transient drain-to-source voltage
  • Bottom-cooled, small 5x6 mm PDFN package
  • RDS(on) = 95 mΩ

PDF File Details

Part number:

GS-065-014-6-L

Manufacturer:

GaN Systems

File Size:

811.48kb

Download:

📄 Datasheet

Description:

700v e-mode gan transistor. The GS-065-014-6-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage

Datasheet Preview: GS-065-014-6-L 📥 Download PDF (811.48kb)
Page 2 of GS-065-014-6-L Page 3 of GS-065-014-6-L

GS-065-014-6-L Application

  • Applications
  • Power Adapters
  • LED Lighting Drivers
  • Fast Battery Charging
  • Power Factor Correction
  • App

TAGS

GS-065-014-6-L
700V
E-mode
GaN
transistor
GaN Systems

📁 Related Datasheet

GS-065-014-6-LR - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 8x8 mm PDFN package • RDS(on) = 95.

GS-065-011-1-L - 650V E-mode GaN transistor (GaN Systems)
GS-065-011-1-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.

GS-065-011-2-L - 650V E-mode GaN transistor (GaN Systems)
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .

GS-065-011-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 12.

GS-065-011-6-LR - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •.

GS-065-018-2-L - 650V E-mode GaN transistor (GaN Systems)
GS-065-018-2-L 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • B.

GS-065-004-1-L - 650V E-mode GaN transistor (GaN Systems)
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.

GS-065-004-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 31.

GS-065-008-1-L - 650V E-mode GaN transistor (GaN Systems)
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 22.

GS-065-008-6-L - 700V E-mode GaN transistor (GaN Systems)
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 16.

Stock and price

part
Infineon Technologies AG
GS-065-014-6-LR-MR
DigiKey
GS-065-014-6-LR-MR
153 In Stock
Qty : 100 units
Unit Price : $3.59
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