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GS-065-014-6-L

700V E-mode GaN transistor

GS-065-014-6-L Features

* 700 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, small 5x6 mm PDFN package

* RDS(on) = 95 mΩ

* IDSmax,DC = 15.2 A / IDSmax,Pulse = 25 A

* Ultra-low FOM

* Simple gate drive requirements (0 V to

GS-065-014-6-L General Description

The GS-065-014-6-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu.

GS-065-014-6-L Datasheet (811.48 KB)

Preview of GS-065-014-6-L PDF

Datasheet Details

Part number:

GS-065-014-6-L

Manufacturer:

GaN Systems

File Size:

811.48 KB

Description:

700v e-mode gan transistor.

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GS-065-014-6-L 700V E-mode GaN transistor GaN Systems

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