GS-065-030-6-LR (GaN Systems)
700V E-mode GaN transistor
Features
• 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 37 mΩ •
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GS-065-030-6-LR 700V E-mode GaN transistor
Features • 700 V enhancement mode power transist.