GS-065-030-6-LR 700V E-mode GaN transistor

GaN Systems

Description

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The GS-065-030-6-LR is an enhancement mode GaN-on-Silicon power transistor.

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Datasheet Specifications

Part number: GS-065-030-6-LR
Manufacturer: GaN Systems
File Size: 888.67 KB
Datasheet: GS-065-030-6-LR-GaNSystems.pdf
Description: 700V E-mode GaN transistor

Features

* 700 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 37 mΩ
* IDS,max = 40 A / IDSmax,Pulse = 67 A
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant

Applications

* Bridgeless Totem Pole PFC
* Consumer, Industrial and Datacenter High Density Power Supply
* High Power Adapters
* LED Lighting Drivers
* Appliance and Industrial Motor Drives
* Solar Inverter
* Uninterruptable Power Supplies
* Laser D

GS-065-030-6-LR Distributors

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GS-065-030-6-LR 700V E-mode GaN transistor GaN Systems

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