GS-065-030-2-L 650V E-mode GaN transistor

GaN Systems

Description

GS-065-030-2-L 650 V E-mode GaN transistor Datasheet .
The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor.

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Datasheet Specifications

Part number: GS-065-030-2-L
Manufacturer: GaN Systems
File Size: 0.97 MB
Datasheet: GS-065-030-2-L-GaNSystems.pdf
Description: 650V E-mode GaN transistor

Features

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, 8x8 mm PDFN package
* RDS(on) = 50 mΩ
* IDS,max = 30 A / IDSmax,Pulse = 60 A
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant

Applications

* Bridgeless Totem Pole PFC
* Consumer, Industrial and Datacenter High Density Power Supply
* High Power Adapters
* LED Lighting Drivers
* Appliance and Industrial Motor Drives
* Solar Inverter
* Uninterruptable Power Supplies
* Laser D

GS-065-030-2-L Distributors

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GS-065-030-2-L 650V E-mode GaN transistor GaN Systems

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