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GS-065-030-2-L

650V E-mode GaN transistor

GS-065-030-2-L Features

* 650 V enhancement mode power transistor

* 850 V transient drain-to-source voltage

* Bottom-cooled, 8x8 mm PDFN package

* RDS(on) = 50 mΩ

* IDS,max = 30 A / IDSmax,Pulse = 60 A

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant

GS-065-030-2-L General Description

The GS-065-030-2-L is an enhancement mode GaNon-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-cu.

GS-065-030-2-L Datasheet (0.97 MB)

Preview of GS-065-030-2-L PDF

Datasheet Details

Part number:

GS-065-030-2-L

Manufacturer:

GaN Systems

File Size:

0.97 MB

Description:

650v e-mode gan transistor.

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GS-065-030-2-L 650V E-mode GaN transistor GaN Systems

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