GS61008T DataSheet
GaN Systems
GS61008T - Top-side cooled 100V E-mode GaN transistor
Jun 17, 2024
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4 Hits
• 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNP...
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