GS66502B DataSheet
GaN Systems
GS66502B - 650V enhancement mode GaN transistor
Apr 14, 2017
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4 Hits
• 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 200 mΩ • IDS(max) = 7.5 A • Ultra-low FOM die • Low inductanc...
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