GS66502B 650V enhancement mode GaN transistor

GaN Systems

Description

GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet .
The GS66502B is an enhancement mode GaN-onsilicon power transistor.

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Datasheet Specifications

Part number: GS66502B
Manufacturer: GaN Systems
File Size: 851.38 KB
Datasheet: GS66502B-GaNSystems.pdf
Description: 650V enhancement mode GaN transistor

Features

* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 200 mΩ
* IDS(max) = 7.5 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant ga

Applications

* AC-DC Converters
* DC-DC converters
* Uninterruptable Power Supplies
* Industrial Motor Drives
* Appliance Motor Drives
* Fast Battery Charging
* Class D Audio amplifiers
* Power Adapters

GS66502B Distributors

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GS66502B 650V enhancement mode GaN transistor GaN Systems

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