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GS66508P

Bottom-side cooled 650V E-mode GaN transistor

GS66508P Features

* 650 V enhancement mode power switch

* Bottom-side cooled configuration

* RDS(on) = 50 mΩ

* IDS(max) = 30 A

* Ultra-low FOM Island Technology® die

* Low inductance GaNPX® package

* Easy gate drive requirements (0 V to 6 V)

* Transient

GS66508P General Description

The GS66508P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low.

GS66508P Datasheet (1.02 MB)

Preview of GS66508P PDF

Datasheet Details

Part number:

GS66508P

Manufacturer:

GaN Systems

File Size:

1.02 MB

Description:

Bottom-side cooled 650v e-mode gan transistor.

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TAGS

GS66508P Bottom-side cooled 650V E-mode GaN transistor GaN Systems

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