GS66508P Datasheet - GaN Systems

GS66508P - Bottom-side cooled 650V E-mode GaN transistor

The GS66508P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low.

GS66508P Features

* 650 V enhancement mode power switch

* Bottom-side cooled configuration

* RDS(on) = 50 mΩ

* IDS(max) = 30 A

* Ultra-low FOM Island Technology® die

* Low inductance GaNPX® package

* Easy gate drive requirements (0 V to 6 V)

* Transient

GS66508P-GaNSystems.pdf