GS66508P Datasheet - GaN Systems

GS66508P Bottom-side cooled 650V E-mode GaN transistor

The GS66508P is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low.

GS66508P Features

* 650 V enhancement mode power switch

* Bottom-side cooled configuration

* RDS(on) = 50 mΩ

* IDS(max) = 30 A

* Ultra-low FOM Island Technology® die

* Low inductance GaNPX® package

* Easy gate drive requirements (0 V to 6 V)

* Transient

GS66508P-GaNSystems.pdf

GS66508P Datasheet Preview — Preview of GS66508P PDF

Datasheet Details

Part number:

GS66508P

Manufacturer:

GaN Systems

File Size:

1.02 MB

Description:

Bottom-side cooled 650v e-mode gan transistor.

📁 Related Datasheet

GS66508B Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)

GS66508T Top cooled 650V enhancement mode GaN transistor (GaN Systems)

GS66502B 650V enhancement mode GaN transistor (GaN Systems)

GS66504B 650V enhancement mode GaN transistor (GaN Systems)

GS66506T Top cooled 650V enhancement mode GaN transistor (GaN Systems)

GS66516B Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)

GS66516T Top cooled 650V enhancement mode GaN transistor (GaN Systems)

GS6001 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)

TAGS

GS66508P GS66508P Bottom-side cooled 650V E-mode GaN transistor GaN Systems

GS66508P Distributor