GS66508P Bottom-side cooled 650V E-mode GaN transistor

GaN Systems

Description

GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B .
The GS66508P is an enhancement mode GaN-onsilicon power transistor.

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Datasheet Specifications

Part number: GS66508P
Manufacturer: GaN Systems
File Size: 1.02 MB
Datasheet: GS66508P-GaNSystems.pdf
Description: Bottom-side cooled 650V E-mode GaN transistor

Features

* 650 V enhancement mode power switch
* Bottom-side cooled configuration
* RDS(on) = 50 mΩ
* IDS(max) = 30 A
* Ultra-low FOM Island Technology® die
* Low inductance GaNPX® package
* Easy gate drive requirements (0 V to 6 V)
* Transient

Applications

* High efficiency power conversion
* High density power conversion
* AC-DC Converters
* Bridgeless Totem Pole PFC
* ZVS Phase Shifted Full Bridge
* Half Bridge topologies
* Synchronous Buck or Boost
* Uninterruptable Power Supplies

GS66508P Distributors

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GS66508P Bottom-side cooled 650V E-mode GaN transistor GaN Systems

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