GS66504B - 650V enhancement mode GaN transistor
The GS66504B is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology®.
GS66504B Features
* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 100 mΩ
* IDS(max) = 15 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gat