GS66504B Features
* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 100 mΩ
* IDS(max) = 15 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gat
Datasheet Details
GS66504B, GS66502B
GaN Systems
851.38 KB
650v enhancement mode gan transistor.
This datasheet PDF includes multiple part numbers: GS66504B, GS66502B.
Please refer to the document for exact specifications by model.
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