GS66516B Datasheet, Transistor, GaN Systems

GS66516B Features

• Transistor
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 25 mΩ
• IDS(max) = 60 A
• Ultra-low FOM die
• Lo

PDF File Details

Part number:

GS66516B

Manufacturer:

GaN Systems

File Size:

1.03MB

Download:

📄 Datasheet

Description:

Bottom-side cooled 650v e-mode gan transistor. The GS66516B is an enhancement mode GaN on silicon power transistor. The properties of GaN allow for high current, high voltage break

GS66516B Application

• Applications
• AC-DC Converters
• DC-DC Converters
• Bridgeless Totem Pole PFC
• Inverters
• Energy Storage

TAGS

GS66516B

GaN Systems

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