GS66516B Datasheet - GaN Systems

GS66516B Bottom-side cooled 650V E-mode GaN transistor

The GS66516B is an enhancement mode GaN on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology.

GS66516B Features

* 650 V enhancement mode power transistor

* Bottom-side cooled configuration

* RDS(on) = 25 mΩ

* IDS(max) = 60 A

* Ultra-low FOM die

* Low inductance GaNPX® package

* Simple drive requirements (0 V to 6 V)

* Transient tolerant gate driv

GS66516B-GaNSystems.pdf

GS66516B Datasheet Preview — Preview of GS66516B PDF

Datasheet Details

Part number:

GS66516B

Manufacturer:

GaN Systems

File Size:

1.03 MB

Description:

Bottom-side cooled 650v e-mode gan transistor.

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GS66516B GS66516B Bottom-side cooled 650V E-mode GaN transistor GaN Systems

GS66516B Distributor