Part number:
GS66516B
Manufacturer:
GaN Systems
File Size:
1.03 MB
Description:
Bottom-side cooled 650v e-mode gan transistor.
* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 25 mΩ
* IDS(max) = 60 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple drive requirements (0 V to 6 V)
* Transient tolerant gate driv
GS66516B
GaN Systems
1.03 MB
Bottom-side cooled 650v e-mode gan transistor.
📁 Related Datasheet
GS66516T Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66502B 650V enhancement mode GaN transistor (GaN Systems)
GS66504B 650V enhancement mode GaN transistor (GaN Systems)
GS66506T Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66508B Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66508P Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66508T Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS6001 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6002 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6004 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
