GS66516B Bottom-side cooled 650V E-mode GaN transistor

GaN Systems

Description

GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet .
The GS66516B is an enhancement mode GaN on silicon power transistor.

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Datasheet Specifications

Part number: GS66516B
Manufacturer: GaN Systems
File Size: 1.03 MB
Datasheet: GS66516B-GaNSystems.pdf
Description: Bottom-side cooled 650V E-mode GaN transistor

Features

* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 25 mΩ
* IDS(max) = 60 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple drive requirements (0 V to 6 V)
* Transient tolerant gate driv

Applications

* AC-DC Converters
* DC-DC Converters
* Bridgeless Totem Pole PFC
* Inverters
* Energy Storage Systems
* On Board Battery Chargers
* Uninterruptable Power Supplies
* Solar Energy
* Industrial Motor Drives
* Laser Drivers

GS66516B Distributors

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GS66516B Bottom-side cooled 650V E-mode GaN transistor GaN Systems

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