GS66506T Top cooled 650V enhancement mode GaN transistor

GaN Systems

Description

GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet .
The GS66506T is an enhancement mode GaN-onsilicon power transistor.

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Datasheet Specifications

Part number: GS66506T
Manufacturer: GaN Systems
File Size: 888.39 KB
Datasheet: GS66506T-GaNSystems.pdf
Description: Top cooled 650V enhancement mode GaN transistor

Features

* 650 V enhancement mode power transistor
* Top-side cooled configuration
* RDS(on) = 67 mΩ
* IDS(max) = 22.5 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate

Applications

* AC-DC Converters
* DC-DC converters
* Uninterruptable Power Supplies
* Industrial Motor Drives
* Appliance Motor Drives
* Fast Battery Charging
* Class D Audio amplifiers

GS66506T Distributors

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GS66506T Top cooled 650V enhancement mode GaN transistor GaN Systems

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