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GS66506T - Top cooled 650V enhancement mode GaN transistor

GS66506T Description

GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet .
The GS66506T is an enhancement mode GaN-onsilicon power transistor.

GS66506T Features

* 650 V enhancement mode power transistor
* Top-side cooled configuration
* RDS(on) = 67 mΩ
* IDS(max) = 22.5 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate

GS66506T Applications

* AC-DC Converters
* DC-DC converters
* Uninterruptable Power Supplies
* Industrial Motor Drives
* Appliance Motor Drives
* Fast Battery Charging
* Class D Audio amplifiers

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Datasheet Details

Part number
GS66506T
Manufacturer
GaN Systems
File Size
888.39 KB
Datasheet
GS66506T-GaNSystems.pdf
Description
Top cooled 650V enhancement mode GaN transistor

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Top cooled 650V enhancement mode GaN transistor GaN Systems
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