Part number:
GS66506T
Manufacturer:
GaN Systems
File Size:
888.39 KB
Description:
Top cooled 650v enhancement mode gan transistor.
* 650 V enhancement mode power transistor
* Top-side cooled configuration
* RDS(on) = 67 mΩ
* IDS(max) = 22.5 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate
GS66506T Datasheet (888.39 KB)
GS66506T
GaN Systems
888.39 KB
Top cooled 650v enhancement mode gan transistor.
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