GS66506T Datasheet, Transistor, GaN Systems

GS66506T Features

  • Transistor
  • 650 V enhancement mode power transistor
  • Top-side cooled configuration
  • RDS(on) = 67 mΩ
  • IDS(max) = 22.5 A
  • Ultra-low FOM die
  • Low

PDF File Details

Part number:

GS66506T

Manufacturer:

GaN Systems

File Size:

888.39kb

Download:

📄 Datasheet

Description:

Top cooled 650v enhancement mode gan transistor. The GS66506T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakd

Datasheet Preview: GS66506T 📥 Download PDF (888.39kb)
Page 2 of GS66506T Page 3 of GS66506T

GS66506T Application

  • Applications
  • AC-DC Converters
  • DC-DC converters
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • <

TAGS

GS66506T
Top
cooled
650V
enhancement
mode
GaN
transistor
GaN Systems

📁 Related Datasheet

GS66502B - 650V enhancement mode GaN transistor (GaN Systems)
GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66504B - 650V enhancement mode GaN transistor (GaN Systems)
GS66504B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66508B - Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66508P - Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66508P Bottom-side cooled 650 V E-mode GaN transistor not remended for new designs- see GS66508B Features • 650 V enhancement mode power switch .

GS66508T - Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66508T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R.

GS66516B - Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66516T - Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66516T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R.

GS6001 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6001/6002/6004 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +1.8V ~ +6V • Rail-to-Rail Input / Output • .

GS6002 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6001/6002/6004 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +1.8V ~ +6V • Rail-to-Rail Input / Output • .

GS6004 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6001/6002/6004 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +1.8V ~ +6V • Rail-to-Rail Input / Output • .

Stock and price

Infineon Technologies AG
GS66506T-MR
DigiKey
GS66506T-MR
153 In Stock
Qty : 100 units
Unit Price : $11.62
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts