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GS66506T - Top cooled 650V enhancement mode GaN transistor

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GaN Systems

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GS66506T Top cooled 650V enhancement mode GaN transistor by GaN Systems - Datasheet Preview — Datasheet preview – GS66506T

Datasheet Details

Part number	GS66506T
Manufacturer	GaN Systems
File Size	888.39 KB
Description	Top cooled 650V enhancement mode GaN transistor
Datasheet	GS66506T Datasheet
Additional preview pages of the GS66506T datasheet.

Product details

Description

The GS66506T is an enhancement mode GaN-onsilicon power transistor.

Features

650 V enhancement mode power transistor.
Top-side cooled configuration.
RDS(on) = 67 mΩ.
IDS(max) = 22.5 A.
Ultra-low FOM die.
Low inductance GaNPX® package.
Simple gate drive requirements (0 V to 6 V).
Transient tolerant gate drive (-20 / +10 V).
Very high switching frequency (> 10 MHz).
Fast and controllable fall and rise times.
Reverse current capability.
Zero reverse recovery loss.

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Published: Apr 14, 2017 |