GS66508B Datasheet - GaN Systems

GS66508B Bottom-side cooled 650V E-mode GaN transistor

The GS66508B is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology®.

GS66508B Features

* 650 V enhancement mode power transistor

* Bottom-side cooled configuration

* RDS(on) = 50 mΩ

* IDS(max) = 30 A

* Ultra-low FOM die

* Low inductance GaNPX® package

* Simple gate drive requirements (0 V to 6 V)

* Transient tolerant gate

GS66508B-GaNSystems.pdf

GS66508B Datasheet Preview — Preview of GS66508B PDF

Datasheet Details

Part number:

GS66508B

Manufacturer:

GaN Systems

File Size:

918.44 KB

Description:

Bottom-side cooled 650v e-mode gan transistor.

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GS66508B GS66508B Bottom-side cooled 650V E-mode GaN transistor GaN Systems

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