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GS66508B - Bottom-side cooled 650V E-mode GaN transistor

GS66508B Description

GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet .
The GS66508B is an enhancement mode GaN-onsilicon power transistor.

GS66508B Features

* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 50 mΩ
* IDS(max) = 30 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate

GS66508B Applications

* AC-DC Converters
* DC-DC Converters
* Bridgeless Totem Pole PFC
* Inverters
* Energy Storage Systems
* On Board Battery Chargers
* Uninterruptable Power Supplies
* Solar Energy
* Industrial Motor Drives
* Appliances

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Datasheet Details

Part number
GS66508B
Manufacturer
GaN Systems
File Size
918.44 KB
Datasheet
GS66508B-GaNSystems.pdf
Description
Bottom-side cooled 650V E-mode GaN transistor

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Bottom-side cooled 650V E-mode GaN transistor GaN Systems
GaN Systems GS66508B-like datasheet