GS66508B Bottom-side cooled 650V E-mode GaN transistor

GaN Systems

Description

GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet .
The GS66508B is an enhancement mode GaN-onsilicon power transistor.

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Datasheet Specifications

Part number: GS66508B
Manufacturer: GaN Systems
File Size: 918.44 KB
Datasheet: GS66508B-GaNSystems.pdf
Description: Bottom-side cooled 650V E-mode GaN transistor

Features

* 650 V enhancement mode power transistor
* Bottom-side cooled configuration
* RDS(on) = 50 mΩ
* IDS(max) = 30 A
* Ultra-low FOM die
* Low inductance GaNPX® package
* Simple gate drive requirements (0 V to 6 V)
* Transient tolerant gate

Applications

* AC-DC Converters
* DC-DC Converters
* Bridgeless Totem Pole PFC
* Inverters
* Energy Storage Systems
* On Board Battery Chargers
* Uninterruptable Power Supplies
* Solar Energy
* Industrial Motor Drives
* Appliances

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GS66508B Bottom-side cooled 650V E-mode GaN transistor GaN Systems

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