GS66508B Datasheet, Transistor, GaN Systems

GS66508B Features

• Transistor
• 650 V enhancement mode power transistor
• Bottom-side cooled configuration
• RDS(on) = 50 mΩ
• IDS(max) = 30 A
• Ultra-low FOM die
• Lo

PDF File Details

Part number:

GS66508B

Manufacturer:

GaN Systems

File Size:

918.44kb

Download:

📄 Datasheet

Description:

Bottom-side cooled 650v e-mode gan transistor. The GS66508B is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakd

GS66508B Application

• Applications
• AC-DC Converters
• DC-DC Converters
• Bridgeless Totem Pole PFC
• Inverters
• Energy Storage

TAGS

GS66508B

GaN Systems

📁 Related Datasheet

GS66508P - Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66508P Bottom-side cooled 650 V E-mode GaN transistor not remended for new designs- see GS66508B Features • 650 V enhancement mode power switch .

GS66508T - Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66508T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R.

GS66502B - 650V enhancement mode GaN transistor (GaN Systems)
GS66502B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66504B - 650V enhancement mode GaN transistor (GaN Systems)
GS66504B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66506T - Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66506T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R.

GS66516B - Bottom-side cooled 650V E-mode GaN transistor (GaN Systems)
GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.

GS66516T - Top cooled 650V enhancement mode GaN transistor (GaN Systems)
GS66516T Top-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Top-side cooled configuration • R.

GS6001 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6001/6002/6004 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +1.8V ~ +6V • Rail-to-Rail Input / Output • .

GS6002 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6001/6002/6004 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +1.8V ~ +6V • Rail-to-Rail Input / Output • .

GS6004 - 1MHZ CMOS Rail-to-Rail IO Opamp (GAINSIL)
GS6001/6002/6004 1MHZ CMOS Rail-to-Rail IO Opamp with RF Filter Features • Single-Supply Operation from +1.8V ~ +6V • Rail-to-Rail Input / Output • .