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Teledyne
TDG650E60 - Bottom- or Top-side Cooled 650V E-mode GaN FET
TDG650E60 Bottom- or Top-side Cooled 650 V E-mode GaN FET Product Specification April 2020 Features • 650 V enhancement mode power switch with P-Ga.
GaN Systems
GS66508B - Bottom-side cooled 650V E-mode GaN transistor
GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.
GaN Systems
GS66516B - Bottom-side cooled 650V E-mode GaN transistor
GS66516B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features • 650 V enhancement mode power transistor • Bottom-side cooled configurati.
GaN Systems
GS66508P - Bottom-side cooled 650V E-mode GaN transistor
GS66508P Bottom-side cooled 650 V E-mode GaN transistor not recommended for new designs- see GS66508B Features • 650 V enhancement mode power switch .
