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Bottom-side

Bottom-side DataSheet

GaN Systems

GS66508P - Bottom-side cooled 650V E-mode GaN transistor

 · 9 Hits • 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • ...
GaN Systems

GS66516B - Bottom-side cooled 650V E-mode GaN transistor

 · 7 Hits • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance ...
Teledyne

TDG650E60 - Bottom- or Top-side Cooled 650V E-mode GaN FET

 · 6 Hits • 650 V enhancement mode power switch with P-GaN gate structure • Bottom- or Top-side cooled configuration • RDS(on) = 25 mΩ (typ) • IDS(max) = 60 A •...
GaN Systems

GS66508B - Bottom-side cooled 650V E-mode GaN transistor

 · 5 Hits • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM die • Low inductance ...
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