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TDG650E60

Bottom- or Top-side Cooled 650V E-mode GaN FET

TDG650E60 Features

* 650 V enhancement mode power switch with P-GaN gate structure

* Bottom- or Top-side cooled configuration

* RDS(on) = 25 mΩ (typ)

* IDS(max) = 60 A

* Ultra-low FOM Island Technology® die

* Ultra-low inductance GaNPX® package

* Easy gate drive

TDG650E60 General Description

Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency. GaN Systems implements patented Island Technology® cell layout for high.

TDG650E60 Datasheet (2.66 MB)

Preview of TDG650E60 PDF

Datasheet Details

Part number:

TDG650E60

Manufacturer:

Teledyne

File Size:

2.66 MB

Description:

Bottom- or top-side cooled 650v e-mode gan fet.

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TAGS

TDG650E60 Bottom- Top-side Cooled 650V E-mode GaN FET Teledyne

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