TDG650E60 Bottom- or Top-side Cooled 650V E-mode GaN FET

Teledyne

Description

TDG650E60 Bottom- or Top-side Cooled 650 V E-mode GaN FET Product Specification April 2020 .
Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology.

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Datasheet Specifications

Part number: TDG650E60
Manufacturer: Teledyne
File Size: 2.66 MB
Datasheet: TDG650E60-Teledyne.pdf
Description: Bottom- or Top-side Cooled 650V E-mode GaN FET

Features

* 650 V enhancement mode power switch with P-GaN gate structure
* Bottom- or Top-side cooled configuration
* RDS(on) = 25 mΩ (typ)
* IDS(max) = 60 A
* Ultra-low FOM Island Technology® die
* Ultra-low inductance GaNPX® package
* Easy gate drive

Applications

* High efficiency power conversion
* High density power conversion
* ac-dc Converters
* Bridgeless Totem Pole PFC
* ZVS Phase Shifted Full Bridge
* Half & Full Bridge topologies
* Synchronous Buck or Boost
* Uninterruptable Power Suppli

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TDG650E60 Bottom- Top-side Cooled 650V E-mode GaN FET Teledyne

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