Datasheet Details
- Part number
- TDG650E60
- Manufacturer
- Teledyne
- File Size
- 2.66 MB
- Datasheet
- TDG650E60-Teledyne.pdf
- Description
- Bottom- or Top-side Cooled 650V E-mode GaN FET
TDG650E60 Description
TDG650E60 Bottom- or Top-side Cooled 650 V E-mode GaN FET Product Specification April 2020 .
Teledyne’s TDG650E60 is an enhancement mode GaN-
on-silicon
power transistor based on GaN
Systems Technology.
TDG650E60 Features
* 650 V enhancement mode power switch with P-GaN gate structure
* Bottom- or Top-side cooled configuration
* RDS(on) = 25 mΩ (typ)
* IDS(max) = 60 A
* Ultra-low FOM Island Technology® die
* Ultra-low inductance GaNPX® package
* Easy gate drive
TDG650E60 Applications
* High efficiency power conversion
* High density power conversion
* ac-dc Converters
* Bridgeless Totem Pole PFC
* ZVS Phase Shifted Full Bridge
* Half & Full Bridge topologies
* Synchronous Buck or Boost
* Uninterruptable Power Suppli
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