TDG650E602TSP

Space GaN E-mode Transistor

Teledyne

TDG650E602TSP Features

* Class one / Level one Production Screening

* Lot Acceptance Test options available

* 650 V enhancement mode power transistor

* Top-cooled, low inductance GaNPX® package

* RDS(on) = 25 mΩ

* IDS(max) = 60 A

* Ultra-low FOM

* Simple gate

TDG650E602TSP General Description

The TDG650E602TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The part based on GaN Systems innovates with industry leading advancements such as patented Island Technolo.

TDG650E602TSP Datasheet (1.61 MB)

TDG650E602TSP Datasheet Preview — Preview of TDG650E602TSP PDF

Datasheet Details

Part number:

TDG650E602TSP

Manufacturer:

Teledyne

File Size:

1.61 MB

Description:

Space gan e-mode transistor.

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TDG650E602TSP Space GaN E-mode Transistor Teledyne

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TDG650E602TSP Features

TDG650E602TSP General Description

Datasheet Details

File Size:

Description:

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