TDG650E601TSP Datasheet (Teledyne) - Space GaN E-mode Transistor

TDG650E601TSP, Space GaN E-mode Transistor

The TDG650E601TSP is a space-grade, 650 V, enhancement mode, GaN-on-Silicon power transistor.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

The part based on GaN Systems innovates with industry leading advancements such as patented Island Technolo

TDG650E601TSP Features

* Class one / Level one Production Screening

* Lot Acceptance Test options available

* 650 V enhancement mode power transistor

* Top-cooled, low inductance GaNPX® package

* RDS(on) = 25 mΩ

* IDS(max) = 60 A

* Ultra-low FOM

* Simple gate