TDG100E90BEP Datasheet, Transistor, Teledyne

TDG100E90BEP Features

• Transistor
• 100 V enhancement mode GaN power switch
• Bottom-side cooled configuration
• RDS(on) = 7 mΩ
• IDS(max) = 90 A
• Ultra-low FOM Island Technology

PDF File Details

Part number:

TDG100E90BEP

Manufacturer:

Teledyne

File Size:

2.93MB

Download:

📄 Datasheet

Description:

100v e-mode gan transistor. The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure

TDG100E90BEP Application

• Applications
• High efficiency power conversio
• High density power conversion
• ac-dc Converters
• Bridgeless Totem

TAGS

TDG100E90BEP

Teledyne

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