TDG100E90BEP 100V E-mode GaN transistor

Teledyne

Description

TDG100E90BEP Bottom-side cooled, 100V E-mode GaN transistor Product Specification .
The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology.

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Datasheet Specifications

Part number: TDG100E90BEP
Manufacturer: Teledyne
File Size: 2.93 MB
Datasheet: TDG100E90BEP-Teledyne.pdf
Description: 100V E-mode GaN transistor

Features

* 100 V enhancement mode GaN power switch
* Bottom-side cooled configuration
* RDS(on) = 7 mΩ
* IDS(max) = 90 A
* Ultra-low FOM Island Technology® die
* Low inductance GaNPX® package
* Easy gate drive requirements (0 V to 6 V)
* Transie

Applications

* High efficiency power conversio
* High density power conversion
* ac-dc Converters
* Bridgeless Totem Pole PFC
* ZVS Phase Shifted Full Bridge
* Half & Full Bridge topologies
* Synchronous Buck or Boost
* Uninterruptable Power Supplie

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TDG100E90BEP 100V E-mode GaN transistor Teledyne

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