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TDG100E90BEP

100V E-mode GaN transistor

TDG100E90BEP Features

* 100 V enhancement mode GaN power switch

* Bottom-side cooled configuration

* RDS(on) = 7 mΩ

* IDS(max) = 90 A

* Ultra-low FOM Island Technology® die

* Low inductance GaNPX® package

* Easy gate drive requirements (0 V to 6 V)

* Transie

TDG100E90BEP General Description

The TDG100E90BEP is an enhancement mode GaN-on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current performan.

TDG100E90BEP Datasheet (2.93 MB)

Preview of TDG100E90BEP PDF

Datasheet Details

Part number:

TDG100E90BEP

Manufacturer:

Teledyne

File Size:

2.93 MB

Description:

100v e-mode gan transistor.

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TAGS

TDG100E90BEP 100V E-mode GaN transistor Teledyne

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