GS66516B DataSheet
GaN Systems
GS66516B - Bottom-side cooled 650V E-mode GaN transistor
Jun 17, 2024
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• 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance ...
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