GS66516T DataSheet
GaN Systems
GS66516T - Top cooled 650V enhancement mode GaN transistor
Apr 14, 2017
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12 Hits
• 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaN...
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