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GT10J321 Datasheet | Specifications & PDF Download

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GT10J321 Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar.

Toshiba Semiconductor

GT10J321 - Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switc.
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