GT10J321 Datasheet - Toshiba Semiconductor

GT10J321 Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications 　　　　　 The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) 　 :t High speed f=0.03μs(typ.) 　 Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum.

GT10J321 Datasheet (158.70 KB)