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GT10J321 Silicon N-Channel IGBT

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Description

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switc.

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Applications

* Fast Switching Applications
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* 　 The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference)
* 　 :t High speed f=0.03μs(typ. )
* 　 Low switching loss :Eon=0.26mJ(typ. ) :Eoff=0.18mJ(typ. ) Low saturation voltage :VCE(sat)=2.

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