Datasheet4U Logo Datasheet4U.com

GT10J321 Datasheet - Toshiba Semiconductor

GT10J321 Silicon N-Channel IGBT

TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications 　 　 　 　 　 The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) 　 :t High speed f=0.03μs(typ.) 　 Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum.

GT10J321 Datasheet (158.70 KB)

Preview of GT10J321 PDF

Datasheet Details

Part number:

GT10J321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

158.70 KB

Description:

Silicon n-channel igbt.

📁 Related Datasheet

GT10J301 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT10J303 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT10J311 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT10J312 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT10 Programmable Display (NAiS)

GT1003B MOSFET (GOFORD)

GT100DA120U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT100DA60U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT100LA120UX IGBT (Vishay Siliconix)

GT100NA120UX IGBT (Vishay Siliconix)

TAGS

GT10J321 Silicon N-Channel IGBT Toshiba Semiconductor

Image Gallery

GT10J321 Datasheet Preview Page 2 GT10J321 Datasheet Preview Page 3

GT10J321 Distributor