GT10J312 Datasheet, Igbt, Toshiba Semiconductor

PDF File Details

Part number:

GT10J312

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

295.12kb

Download:

📄 Datasheet

Description:

Silicon n-channel igbt.

TAGS

📁 Related Datasheet

GT10J311 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT10J301 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT10J303 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTR.

GT10J321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switc.

GT10 - Programmable Display (NAiS)
GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002 Programmable Display GT10/GT30 Technical Manual Includes i.

GT1003B - MOSFET (GOFORD)
GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit.

GT100DA120U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology tempe.

GT100DA60U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temper.

GT100LA120UX - IGBT (Vishay Siliconix)
.DataSheet.co.kr GT100LA120UX Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very.

GT100NA120UX - IGBT (Vishay Siliconix)
.DataSheet.co.kr GT100NA120UX Vishay Semiconductors High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Ver.