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GT10G131 Silicon N-Channel IGBT

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Description

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm * 5th generation (tre.

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Applications

* Unit: mm
* 5th generation (trench gate structure) IGBT
* Enhancement-mode
* 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A)
* Peak collector current: IC = 200 A (max)
* Built-in zener diode between gate and emitter
* SOP-8 package Absolute M

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GT10G131 Silicon N-Channel IGBT Toshiba Semiconductor
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