Datasheet Details
Part number:
GT10G131
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
245.60 KB
Description:
Silicon n-channel igbt.
GT10G131-ToshibaSemiconductor.pdf
GT10G131-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT10G131
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
245.60 KB
Description:
Silicon n-channel igbt.
GT10G131, Silicon N-Channel IGBT
GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter volta
📁 Related Datasheet
📌 All Tags