Datasheet4U.com

GT100DA120U - Insulated Gate Bipolar Transistor

Vishay Siliconix

📥 Download Datasheet

GT100DA120U Datasheet Preview — Preview of GT100DA120U PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GT100DA120U
Manufacturer	Vishay ↗ Siliconix
File Size	242.19 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	GT100DA120U_VishaySiliconix.pdf

GT100DA120U Product details

Features

Trench IGBT technology temperature coefficient.
Square RBSOA.
10 μs short circuit capability.

📁 GT100DA120U Similar Datasheet

GT1003B - MOSFET (GOFORD)
GT100PI120T6H-T4M - IGBT (NJSME)
GT10 - Programmable Display (NAiS)
GT101 - PCB to Wire Connector (ANN REN)
GT105N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10F - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)

Other Datasheets by Vishay Siliconix

GT100DA60U - Insulated Gate Bipolar Transistor
GT100LA120UX - IGBT
GT100NA120UX - IGBT

Published: Jan 9, 2012 |