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GT100DA120U Datasheet - Vishay Siliconix

GT100DA120U Insulated Gate Bipolar Transistor

GT100DA120U Features

* Trench IGBT technology temperature coefficient

* Square RBSOA

* 10 μs short circuit capability

* HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive

* TJ maximum = 150 °C

* Fully isolated package

* Very low i

GT100DA120U_VishaySiliconix.pdf

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Datasheet Details

Part number:

GT100DA120U

Manufacturer:

Vishay ↗ Siliconix

File Size:

242.19 KB

Description:

Insulated gate bipolar transistor.

GT100DA120U Distributor

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GT100DA120U GT100DA120U Insulated Gate Bipolar Transistor Vishay Siliconix