GT100PI120T6H-T4M Datasheet - NJSME

GT100PI120T6H-T4M - IGBT

Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reveres Transfer Capacitance IC=1mA, VCE=V.

GT100PI120T6H-T4M Features

* Field Stop Trench Gate IGBT

* Short Circuit Rated>10μs

* Low Saturation Voltage

* Low Switching Loss

* 100% RBSOA Tested（2×Ic）

* Low Stray Inductance

* Lead Free, Compliant with RoHS Requirement Applications：

* Industrial Inverters

* Servo Applications IGBT, I

GT100PI120T6H-T4M-NJSME.pdf