GT100PI120T6H-T4M Datasheet - NJSME

GT100PI120T6H-T4M, IGBT

GT100PI120T6H-T4M IGBT Module .
Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Lea.

Features

* Field Stop Trench Gate IGBT
* Short Circuit Rated>10μs
* Low Saturation Voltage
* Low Switching Loss
* 100% RBSOA Tested（2×Ic）
* Low Stray Inductance

Applications

* Industrial Inverters
* Servo Applications IGBT, Inverter Maximum Rated Values(TC=25℃unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Ma

GT100PI120T6H-T4M-NJSME.pdf