Datasheet4U Logo Datasheet4U.com

GT100PI120T6H-T4M IGBT

GT100PI120T6H-T4M Description

GT100PI120T6H-T4M IGBT Module .
Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Lea.

GT100PI120T6H-T4M Features

* Field Stop Trench Gate IGBT
* Short Circuit Rated>10μs
* Low Saturation Voltage
* Low Switching Loss
* 100% RBSOA Tested（2×Ic）
* Low Stray Inductance

GT100PI120T6H-T4M Applications

* Industrial Inverters
* Servo Applications IGBT, Inverter Maximum Rated Values(TC=25℃unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Ma

📥 Download Datasheet

Preview of GT100PI120T6H-T4M PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GT100PI120T6H-T4M
Manufacturer
NJSME
File Size
389.71 KB
Datasheet
GT100PI120T6H-T4M-NJSME.pdf
Description
IGBT

📁 Related Datasheet

  • GT1003B - MOSFET (GOFORD)
  • GT100DA120U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GT100DA60U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GT100LA120UX - IGBT (Vishay Siliconix)
  • GT100NA120UX - IGBT (Vishay Siliconix)
  • GT10 - Programmable Display (NAiS)
  • GT101 - PCB to Wire Connector (ANN REN)
  • GT105N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)

📌 All Tags

IGBT NJSME
NJSME GT100PI120T6H-T4M-like datasheet