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GT100PI120T6H-T4M - IGBT

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Part number GT100PI120T6H-T4M
Manufacturer NJSME
File Size 389.71 KB
Description IGBT
Datasheet download datasheet GT100PI120T6H-T4M Datasheet
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Description

Conditions Min Typ Max Unit VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reveres Transfer Capacitance IC=1mA, VCE=VGE TJ=25℃ IC=100A, VGE =15V TJ=125℃ TJ=150℃ VGE=0V, VCE=VCES, TJ=25℃ VGE= ±20V, VCE=0V, TJ=25℃ VCE=25V, VGE=0V , f=1MHz 5.0 5.5 6.6 V 1.70 2.00 V 1.90 V 1.90 V 1 mA 200 nA 8.03 n

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