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GT1003B - MOSFET
(GOFORD)
GOFORD
GT1003B
Description
The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit.
GT100DA120U - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology tempe.
GT100DA60U - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology temper.
GT100LA120UX - IGBT
(Vishay Siliconix)
.DataSheet.co.kr
GT100LA120UX
Vishay Semiconductors
Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology • Very.
GT100NA120UX - IGBT
(Vishay Siliconix)
.DataSheet.co.kr
GT100NA120UX
Vishay Semiconductors
High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology • Ver.
GT101 - PCB to Wire Connector
(ANN REN)
.
GT105N10 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT105N10K
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10K uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT105N10F - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT105N10F
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10F uses advanced trench technology to
provide excellent RDS(ON) , low gate.
GT105N10K - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT105N10K
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10K uses advanced trench technology to
provide excellent RDS(ON) , low gate .
GT105N10T - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GT105N10T
N-Channel Enhancement Mode Power MOSFET
Description
The GT105N10T uses advanced trench technology to
provide excellent RDS(ON) , low gate .