GT100DA60U - Insulated Gate Bipolar Transistor

Product Overview

Vishay Siliconix

Part number	GT100DA60U
Manufacturer	Vishay Siliconix
File Size	240.15 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	GT100DA60U Datasheet
Additional preview pages of the GT100DA60U datasheet.

Trench IGBT technology temperature coefficient.
Square RBSOA.
3 μs short circuit capability.
FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive.
TJ maximum = 175 °C.
Fully isolated package.
Very low internal inductance ( 5 nH typical).
Industry standard outline.
UL approved file E78996.
Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.72 V 100 A at 25 °C P.

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Published: Jan 9, 2012 |