GT105N10T Datasheet, Mosfet, GOFORD

GT105N10T Features

• Mosfet l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 55A < 10.5mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Powe

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Part number:

GT105N10T

Manufacturer:

GOFORD

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1.00MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The GT105N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ap

GT105N10T Application

• Applications General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 55A < 10.5mΩ < 15mΩ l 100% Aval

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GT105N10T

GOFORD

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