Part number:
GT100LA120UX
Manufacturer:
Vishay ↗ Siliconix
File Size:
241.62 KB
Description:
Igbt.
GT100LA120UX Features
* Trench IGBT technology
* Very low VCE(on)
* Square RBSOA
* HEXFRED® clamping diode
* 10 μs short circuit capability SOT-227
* Fully isolated package
* Speed 4 kHz to 30 kHz
* Very low internal inductance ( 5 nH typical)
* In
GT100LA120UX Datasheet (241.62 KB)
Datasheet Details
GT100LA120UX
Vishay ↗ Siliconix
241.62 KB
Igbt.
📁 Related Datasheet
GT1003B MOSFET (GOFORD)
GT100DA120U Insulated Gate Bipolar Transistor (Vishay Siliconix)
GT100DA60U Insulated Gate Bipolar Transistor (Vishay Siliconix)
GT100NA120UX IGBT (Vishay Siliconix)
GT10 Programmable Display (NAiS)
GT101 PCB to Wire Connector (ANN REN)
GT105N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10F N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT100LA120UX Distributor