GT105N10F

N-Channel Enhancement Mode Power MOSFET

GT105N10F Features

* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) l 100% Avalanche Tested l RoHS Compliant 100V 25A < 10.5mΩ < 15mΩ Schematic diagram Application l Synchronous Rectification in SMPS or LED Driver l UPS l Motor Control l BMS l High Frequency Circuit TO-220F Device GT1

GT105N10F Datasheet (673.18 KB)

GT105N10F Datasheet Preview — Preview of GT105N10F PDF

Datasheet Details

Part number:

GT105N10F

Manufacturer:

GOFORD

File Size:

673.18 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

GT105N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT105N10K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT105N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT105N10T N-Channel Enhancement Mode Power MOSFET Description The GT105N10T uses advanced trench technology to provide excellent RDS(ON) , low gate .

GT10 - Programmable Display (NAiS)
GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002 Programmable Display GT10/GT30 Technical Manual Includes i.

GT1003B - MOSFET (GOFORD)
GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit.

GT100DA120U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology tempe.

GT100DA60U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temper.

GT100LA120UX - IGBT (Vishay Siliconix)
.DataSheet.co.kr GT100LA120UX Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very.

TAGS

GT105N10F N-Channel Enhancement Mode Power MOSFET GOFORD

Image Gallery

GT105N10F Features

Datasheet Details

File Size:

Description:

GT105N10F Distributor