GT110N06
GOFORD
600.18kb
N-channel enhancement mode power mosfet. The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ap
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GT110N06S - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
GOFORD
GT110N06S
N-Channel Enhancement Mode Power MOSFET
Description
The GT110N06S uses advanced trench technology to
provide excellent RDS(ON) , .
GT1151 - Capacitive touch-chip functions
(GOODIX)
HotKnot GT1151
GT1151
HotKnot
Rev.03——2014 07 21
====== ======
,。 ,。(“GOODIX”) 、、, 、、、。GOODIX 。GOODIX,GOODIX 。GOODIX , 。
1
HotKnot .
GT1151QM - Capacitive Touch Chip
(GOODIX)
Custom Gesture Wake-up: GT1151QM
GT1151QM
Capacitive Touch Chip with Custom
Gesture Wake-up Function
dV0e.1fi—n—edMagye1s5t, u20r1e9 wake-up function
.
GT10 - Programmable Display
(NAiS)
GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002
Programmable Display
GT10/GT30
Technical Manual
Includes i.
GT1003B - MOSFET
(GOFORD)
GOFORD
GT1003B
Description
The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit.
GT100DA120U - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GT100DA120U
Vishay Semiconductors
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FEATURES
• Trench IGBT technology tempe.
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.DataSheet.co.kr
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GT100LA120UX
Vishay Semiconductors
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GT100NA120UX - IGBT
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GT101 - PCB to Wire Connector
(ANN REN)
.