GT110N06 Datasheet - GOFORD

N-Channel Enhancement Mode Power MOSFET

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* 100% Avalanche Tested

* RoHS Compliant 60V 14A < 11mΩ < 14mΩ Application

* Synchronous Rectification in SMPS or LED Driver

* UPS

* Motor Control

* BMS

* High Frequency Circui

GT110N06

GOFORD

600.18 KB

N-channel enhancement mode power mosfet.

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GT110N06 N-Channel Enhancement Mode Power MOSFET GOFORD

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