Datasheet4U Logo Datasheet4U.com

GT110N06, GT110N06S Datasheet - GOFORD

GT110N06 N-Channel Enhancement Mode Power MOSFET

GT110N06 Features

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* 100% Avalanche Tested

* RoHS Compliant 60V 14A < 11mΩ < 14mΩ Application

* Synchronous Rectification in SMPS or LED Driver

* UPS

* Motor Control

* BMS

* High Frequency Circui

GT110N06S-GOFORD.pdf

This datasheet PDF includes multiple part numbers: GT110N06, GT110N06S. Please refer to the document for exact specifications by model.
GT110N06 Datasheet Preview Page 2 GT110N06 Datasheet Preview Page 3

Datasheet Details

Part number:

GT110N06, GT110N06S

Manufacturer:

GOFORD

File Size:

600.18 KB

Description:

N-channel enhancement mode power mosfet.

Note:

This datasheet PDF includes multiple part numbers: GT110N06, GT110N06S.
Please refer to the document for exact specifications by model.

GT110N06 Distributor

📁 Related Datasheet

GT110N06S N-Channel Enhancement Mode Power MOSFET (GOFORD)

GT1151 Capacitive touch-chip functions (GOODIX)

GT1151QM Capacitive Touch Chip (GOODIX)

GT10 Programmable Display (NAiS)

GT1003B MOSFET (GOFORD)

GT100DA120U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT100DA60U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT100LA120UX IGBT (Vishay Siliconix)

TAGS

GT110N06 GT110N06S N-Channel Enhancement Mode Power MOSFET GOFORD