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GT110N06S - N-Channel Enhancement Mode Power MOSFET

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GT110N06S N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT110N06S

Datasheet Details

Part number	GT110N06S
Manufacturer	GOFORD
File Size	600.18 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT110N06S Datasheet
Additional preview pages of the GT110N06S datasheet.

Product details

Description

The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant 60V 14A < 11mΩ < 14mΩ.

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Published: Oct 25, 2024 |