GT110N06S

N-Channel Enhancement Mode Power MOSFET

Image	Manufacturer	P/N	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Goford Semiconductor	GT110N06S	GT110N06S	N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1	DigiKey	3583	2000 units	$0.3	🛒 Buy Now

Download Datasheet (600.18 KB)

GT110N06S Datasheet Preview — Preview of GT110N06S Datasheet

Datasheet Details

Part number:

GT110N06S

Manufacturer:

GOFORD

File Size:

600.18 KB

Description:

N-channel enhancement mode power mosfet.
GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET Description The GT110N06S uses advanced.
The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It ca.

✔ GT110N06S Features

VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
100% Avalanche Tested
RoHS Compliant 60V 14A < 11mΩ < 14mΩ Application
Synchronous R

✔ GT110N06S Application

General Features
VDS
ID (at VGS = 10V)
RDS(ON) (at VGS = 10V)
RDS(ON) (at VGS = 4.5V)
100% Aval

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TAGS

GT110N06S N-Channel Enhancement Mode Power MOSFET GOFORD

GT110N06S Distributor

Goford Semiconductor

GT110N06S

N-CH 60V 14A 11mOhmMAX at 10V, 14mOhmMAX at 4.5V, SOP-8

Verical

40000 In Stock

Qty : 32000 units

Unit Price : $0.18

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