GT110N06S Datasheet, Mosfet, GOFORD

GT110N06S Features

• Mosfet
• VDS
• ID (at VGS = 10V)
• RDS(ON) (at VGS = 10V)
• RDS(ON) (at VGS = 4.5V)
• 100% Avalanche Tested
• RoHS Compliant 60V 14A < 11mΩ <

PDF File Details

Part number:

GT110N06S

Manufacturer:

GOFORD

File Size:

600.18kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ap

GT110N06S Application

• Applications General Features
• VDS
• ID (at VGS = 10V)
• RDS(ON) (at VGS = 10V)
• RDS(ON) (at VGS = 4.5V)
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TAGS

GT110N06S

GOFORD

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