GT110N06S N-Channel Enhancement Mode Power MOSFET

GT110N06S Description

GOFORD GT110N06S N-Channel Enhancement Mode Power MOSFET .
The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

GT110N06S Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

📥 Download Datasheet

GT110N06S Datasheet Preview — Preview of GT110N06S PDF

Datasheet Details

Part number: GT110N06S
Manufacturer: GOFORD
File Size: 600.18 KB
Datasheet: GT110N06S-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET GOFORD

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