Datasheet4U Logo Datasheet4U.com

GT10PI120B3H IGBT

GT10PI120B3H Description

GT10PI120B3H IGBT Module .
VGE(th) Gate-Emitter Threshold Voltage Conditions IC = 1 mA, VCE = VGE Min Typ Max Unit 4.

GT10PI120B3H Applications

* z Industrial Inverters z Servo Applications IGBT, Inverter Maximum Rated Values (TC=25℃unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current Repetitive Peak Collector Current Short Circuit Withstand Time Maximum P

📥 Download Datasheet

Preview of GT10PI120B3H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GT10 - Programmable Display (NAiS)
  • GT1003B - MOSFET (GOFORD)
  • GT100DA120U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GT100DA60U - Insulated Gate Bipolar Transistor (Vishay Siliconix)
  • GT100LA120UX - IGBT (Vishay Siliconix)
  • GT100NA120UX - IGBT (Vishay Siliconix)
  • GT101 - PCB to Wire Connector (ANN REN)
  • GT105N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)

📌 All Tags

IGBT NJSME
NJSME GT10PI120B3H-like datasheet