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GT10PI120B3H - IGBT

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Part number GT10PI120B3H
Manufacturer NJSME
File Size 712.39 KB
Description IGBT
Datasheet download datasheet GT10PI120B3H Datasheet
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Description

VGE(th) Gate-Emitter Threshold Voltage Conditions IC = 1 mA, VCE = VGE Min Typ Max Unit 4.5 5.5 6.0 V VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance IC = 10 A, VGE = 15V TJ = 25℃ TJ = 125℃ VGE = 0V, VCE = VCES, TJ = 25℃ VGE = ±20V, VCE = 0V, TJ = 25℃ VCE = 25V, VGE = 0V , f ＝1MHz 1.90 2.10 V 2.20 V 1 mA 200 nA 1.5 nF 0.1 nF Switching Characteris

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