GT10PI120B3H Datasheet - NJSME

GT10PI120B3H - IGBT

VGE(th) Gate-Emitter Threshold Voltage Conditions IC = 1 mA, VCE = VGE Min Typ Max Unit 4.5 5.5 6.0 V VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance IC = 10 A, VGE.

GT10PI120B3H Features

* z Short Circuit Rated>10μs z Field Stop Trench Gate IGBT z Low Saturation Voltage z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement Applications： z Industrial Inverters z Servo Applications IGBT, Inverter Maximum Rated Values (TC=25℃

GT10PI120B3H-SILVERMICRO.pdf

GT10PI120B3H Datasheet Preview — Preview of GT10PI120B3H PDF

Datasheet Details

Part number:

GT10PI120B3H

Manufacturer:

NJSME

File Size:

712.39 KB

Description:

Igbt.

GT10PI120B3H Distributor

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GT10PI120B3H IGBT NJSME