GT10Q101 Datasheet - Toshiba Semiconductor

GT10Q101, Silicon N-Channel IGBT

GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm *.

Applications

* Unit: mm
* The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation

GT10Q101_ToshibaSemiconductor.pdf