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GT10Q101 Datasheet - Toshiba Semiconductor

GT10Q101 Silicon N-Channel IGBT

GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms .

GT10Q101 Datasheet (297.48 KB)

Preview of GT10Q101 PDF

Datasheet Details

Part number:

GT10Q101

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

297.48 KB

Description:

Silicon n-channel igbt.

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GT10Q101 Silicon N-Channel IGBT Toshiba Semiconductor

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