GT10Q101 Datasheet (297.48 KB)
GT10Q101
Toshiba ↗ Semiconductor
297.48 KB
Silicon n-channel igbt.
GT10Q101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm
*.
📁 Related Datasheet
GT10Q301 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
GT10Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q301
High Power Switching Applications Motor Control Applications
Unit:.
GT10Q311 - Silicon N-Channel IGBT
(Toshiba Semiconductor)
.
GT10 - Programmable Display
(NAiS)
GT10/GT30 Technical Manual Matsushita Electric Works (Europe) AG ARCT1F340V1.0END 1/2002
Programmable Display
GT10/GT30
Technical Manual
Includes i.
GT1003B - MOSFET
(GOFORD)
GOFORD
GT1003B
Description
The GT1003B uses advanced trench technology and design to provide excellent RDS(ON), low gate charge. This device is suit.
GT100DA120U - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology tempe.
GT100DA60U - Insulated Gate Bipolar Transistor
(Vishay Siliconix)
.DataSheet.co.kr
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology temper.
GT100LA120UX - IGBT
(Vishay Siliconix)
.DataSheet.co.kr
GT100LA120UX
Vishay Semiconductors
Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology • Very.
GT100NA120UX - IGBT
(Vishay Siliconix)
.DataSheet.co.kr
GT100NA120UX
Vishay Semiconductors
High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
• Trench IGBT technology • Ver.
