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GT10Q301 Datasheet - Toshiba Semiconductor

GT10Q301 Silicon N-Channel IGBT

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit: mm The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current DC 1 ms DC 1.

GT10Q301 Datasheet (168.53 KB)

Preview of GT10Q301 PDF

Datasheet Details

Part number:

GT10Q301

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

168.53 KB

Description:

Silicon n-channel igbt.

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GT10Q301 Silicon N-Channel IGBT Toshiba Semiconductor

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