GT10Q301 Datasheet - Toshiba Semiconductor

GT10Q301, Silicon N-Channel IGBT

GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications Unit:.

Applications

* Motor Control Applications Unit: mm
* The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gat

GT10Q301-ToshibaSemiconductor.pdf