GT10J303 Datasheet - Toshiba Semiconductor

GT10J303 Silicon N-Channel IGBT

www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10A) Unit: mm z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate-Emitter Voltage Collector Curren.

GT10J303 Datasheet (534.11 KB)