Datasheet Specifications
- Part number
- GT10J303
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 534.11 KB
- Datasheet
- GT10J303_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTR.
Applications
* MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max. ) (IC = 10A) : VCE (sat) = 2.7V (Max. ) (IC = 10A) Unit: mm z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC CollectorGT10J303 Distributors
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