GTR Datasheet | Specifications & PDF Download

FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC5

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US2A THRU US2M SURFACE MOUNT HIGH EFFICIENCY RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 2.0 Ampere FEATURES DO-214AA（SMB） Plastic

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RL201 THRU RL207 GENERAL PURPOSE SILICON RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 2.0 Amperes FEATURES The plastic package carries

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RL201 THRU RL207 GENERAL PURPOSE SILICON RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 2.0 Amperes FEATURES The plastic package carries

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TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High inp

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US1A THRU US1M FEATURES SURFACE MOUNT HIGH EFFICIENCY RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 1.0 Ampere DO-214AC（SMA） Plastic p

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RKT-3269 1/4 ” Square SMD Trimming Potentiometer FEATURES  Multi-Turn / Cermet / Industrial  Rotor designed for automatic machine adjust interfac

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10A05 THRU 10A10 GENERAL PURPOSE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Ampere FEATURES R-6 Low forward voltage drop Low leakage curr

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MUR0520 THRU MUR0580 FEATURE Lead Free Finish/RoHS Compliant Extremely Low Thermal Resistance For Surface Mount Application and High Current Capabili

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ZMM1 THRU ZMM75 Silicon Epitaxial Planar Zener Diodes in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to

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www.DataSheet4U.com CPI gyrotrons were the first commercially available high-power, long-pulse/CW, high-frequency devices for plasma fusion experimen

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BAV100 THRU BAV103 FEATURE Silicon Epitaxial Planar Diodes For general purpose These diodes are also available in other case styles including: the DO

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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RL201 THRU RL207 GENERAL PURPOSE SILICON RECTIFIER REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 2.0 Amperes FEATURES The plastic package carries

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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KKT 3mm Ceramic Trimmer Capacitor SMD FEATURES  Low capacitance drift.  High durability from vibration, dust, moisture and flux.  Color coded case

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FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC5

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FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC5

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FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC5

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TF SERIEs TF SERIEs torque flange sensors Features ▪▪ Complete torque measuring system including: measuring flange with signal amplifier, HF trans

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