
GTRB264318FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB264318FC
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 2500 – 2700 MHz
Description
The GTRB264318FC is a 400-watt (P3dB) GaN on Si
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