
GTRB266908FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB266908FC
Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz
Description
The GTRB266908FC is a 630-watt (P4dB) GaN on Si
Rating:
1
★
(3 votes)