
GTRB267008FC - Thermally-Enhanced High Power RF GaN on SiC HEMT
GTRB267008FC
Thermally-Enhanced High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 – 2690 MHz
Description
The GTRB267008FC is a 620-watt (P4dB) GaN on Si
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