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USHIO
HL63101MG - AlGaInP Laser Diode
Data Sheet HL63101MG/102MG 638nm / 7mW AlGaInP Laser Diode Outline Internal Circuit Features • Optical output power: 5mW(CW) • Visible light output.
ETC
708SRAP-R-AU-01 - AlGaInP Red LED chip
AlGaInP Red LED chip Features: (1) High luminous intensity (2) Long operation life (3) 100% probing test (4) Low driving current applications Characte.
Mitsubishi
ML1012R - a high power AlGaInP semiconductor laser
ML1XX2 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1012R, ML1412R, ML120G2 FEATURES • High Power: 30mW (CW), 50mW (pulse) • Visible Light: 68.
Hitachi Semiconductor
HL6312G - (HL6312G / HL6313G) AlGaInP Laser Diodes
www.DataSheet4U.com HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).
OPTEK Technologies
OPE5T62UO - AIGaInP Ultra Bright Orange LED Lamp
www.DataSheet4U.com AlGaInP Ultra Bright Orange LED Lamp OPE5T62UO The OPE5T62UO is AlGaInP ultra bright light emitting diode that is designed for u.
Laser Components
ADL-63102TL-3 - AlGaInP Visible Laser Diode
AlGaInP Visible Laser Diode ADL-63102TL-3 DATE：2006/06/29 Ver 1.0 ★635nm 10mW 50 oC Reliable Operation • Features 1. High visibility (10mW) 2. High te.
Laser Components
ADL-63102TR - AlGaInP Visible Laser Diode
AlGaInP Visible Laser Diode 2003/8 635nm 10mW 50 oC Reliable Operation • Features 1. Short wavelength: 635nm (Typ.) 2. High output power: 10mW CW 3. L.
United Monolithic Semiconductors
CHA7010 - X-band GaInP HBT High Power Amplifier
CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7010 is a monolithic two-stage GaAs hig.
USHIO
HL63102MG - AlGaInP Laser Diode
Data Sheet HL63101MG/102MG 638nm / 7mW AlGaInP Laser Diode Outline Internal Circuit Features • Optical output power: 5mW(CW) • Visible light output.
USHIO
HL63290HD - AlGaInP Laser Diode
Data Sheet HL63290HD 638nm /2.2W (CW) /2.5W (Pulse) AlGaInP Laser Diode Outline φ9.0 +0 -0.025 1.0±0.1 + 0. 1 0.4 -0 (90o) (0.65) (0.25) Glass.
Mitsubishi
ML1016R - a high power AlGaInP semiconductor laser
MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1016R, ML120G6 FEATURES • High Power: 30mW (CW), 50mW (pulse) • V.
Mitsubishi
ML101J8 - a high power AlGaInP semiconductor laser
MITSUBISHI LASER DIODES ML1XX8 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML101J8, ML120G8 FEATURES • High Output Power: 40mW (CW) , 60mW (Pu.
Hitachi
HL6714G - AlGaInP Laser Diode
HL6714G AlGaInP Laser Diode ODE-208-192C (Z) Rev.3 Jan. 2003 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-.
Hitachi
HL6323MG - AlGaInP Laser Diode
HL6323MG AlGaInP Laser Diode ADE-208-1410 (Z) 1st Edition Mar. 2001 Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-.
Hitachi Semiconductor
HL6724MG - band AlGaInP laser diode
HL6724MG AlGaInP Laser Diode Description The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable.
Hitachi Semiconductor
HL6313G - (HL6312G / HL6313G) AlGaInP Laser Diodes
www.DataSheet4U.com HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW).
Hitachi Semiconductor
HL6314MG - AlGaInP Laser Diode
www.DataSheet4U.com HL6314MG AlGaInP Laser Diode Description The HL6314MG is a 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) stru.
