
H5N5016PL-E0-E (Renesas)
MOSFET
H5N5016PL-E0-E
500V - 50A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°
(20 views)
H5N5016PL Silicon N Channel MOS FET High Speed Pow.
MOSFET
Silicon N-Channel MOSFET
H5N5016PL Distributor