H5N5016PL Silicon N Channel MOS FET High Speed Pow.
Renesas Technology
H5N5016PL - Silicon N-Channel MOSFET
H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • Low on-resistance • Low leakage curre.
Renesas
H5N5016PL-E0-E - MOSFET
H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°.
